Investigations on the characterization of ion implanted hexagonal boran nitride

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dc.contributor.authorAradi, E.
dc.contributor.authorNaidoo, S.R.
dc.contributor.authorErasmus, R.M.
dc.contributor.authorJulies, B.
dc.contributor.authorDerry, T.E.
dc.date.accessioned2017-09-05T11:33:53Z
dc.date.available2017-09-05T11:33:53Z
dc.date.issued2013
dc.description.abstractThe effect of ion implantation on hexagonal boron nitride (h-BN) is studied herein. We use boron as an ion of choice to introduce radiation damage into h-BN, at fluences ranging from 1 x 10 14–1 x 10 16 ions/cm2 and implantation energy ranges from 40 to 160 keV. The thermal dependence is also investigated by varying the annealing temperature from room temperature to 400°C after implantation. Raman spectroscopy showed Raman active defects one of which is possibly related to the formation of cubic boron nitride nanocrystals (nc-BN) within the implanted range. The relationship of these defect induced Raman active peaks was investigated by varying the implantation parameters. The preliminary Transmission Electron Microscopy (TEM) results also are reported briefly.en_US
dc.description.accreditationWeb of Science
dc.identifier.citationAradi, E. et al. (2013). Investigations on the characterization of ion implanted hexagonal boran nitride. Nuclear Instruments and Methods in Physics Research, 307: 214-217en_US
dc.identifier.issn0168-583X
dc.identifier.urihttp://dx.doi.org/10.1016/j.nimb.2012.12.118
dc.identifier.urihttp://hdl.handle.net/10566/3174
dc.language.isoenen_US
dc.privacy.showsubmitterFALSE
dc.publisherElsevieren_US
dc.rightshttp://dx.doi.org/10.1016/j.nimb.2012.12.118
dc.status.ispeerreviewedTRUE
dc.subjectBoron nitrideen_US
dc.subjectIon implantationen_US
dc.subjectRaman spectroscopyen_US
dc.subjectTransmission electron microscopyen_US
dc.titleInvestigations on the characterization of ion implanted hexagonal boran nitrideen_US
dc.typeArticleen_US

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