Thermal stability and defect structure of hot-wire deposited amorphous silicon
| dc.contributor.advisor | Knoesen, D | |
| dc.contributor.author | Arendse, CJ | |
| dc.date.accessioned | 2023-06-12T20:14:46Z | |
| dc.date.accessioned | 2024-05-14T07:35:34Z | |
| dc.date.available | 2023-06-12T20:14:46Z | |
| dc.date.available | 2024-05-14T07:35:34Z | |
| dc.date.issued | 2004 | |
| dc.description | Doctor Scientiae - DSc | en_US |
| dc.description.abstract | Hydrogenated amorphous silicon (a-Si:H) thin films are presently used in several large-area thin-film applications. However, one major concern of a-Si:H is the fact that the stability of the material degrades when it is exposed to prolonged sunlight illumination. This effect, referred to as the Staebler-Wronski effect (SWE), is however reduced when using hot-wire (HW) deposited a-Si:H material with a low hydrogen concentration and favorable microstructure. In this thesis we report on the thermal stability of HW-deposited a-Si:H thin films, with different H-concentrations and bonding configurations, when exposed to elevated temperatures in excess of 100 "C. | en_US |
| dc.identifier.uri | https://hdl.handle.net/10566/14827 | |
| dc.language.iso | en | en_US |
| dc.publisher | UWC | en_US |
| dc.subject | raman scattering | en_US |
| dc.subject | structural order | en_US |
| dc.subject | microstructure | en_US |
| dc.subject | microvoids | en_US |
| dc.title | Thermal stability and defect structure of hot-wire deposited amorphous silicon | en_US |