Thermal stability and defect structure of hot-wire deposited amorphous silicon
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Date
2004
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
UWC
Abstract
Hydrogenated amorphous silicon (a-Si:H) thin films are presently used in several large-area thin-film applications. However, one major concern of a-Si:H is the fact that the stability of the material degrades when it is exposed to prolonged sunlight illumination. This effect, referred to as the Staebler-Wronski effect (SWE), is however reduced when using hot-wire (HW) deposited a-Si:H material with a low hydrogen concentration and favorable microstructure. In this thesis we report on the thermal stability of HW-deposited a-Si:H thin films, with different H-concentrations and bonding configurations, when exposed to elevated temperatures in excess of 100 "C.
Description
Doctor Scientiae - DSc
Keywords
raman scattering, structural order, microstructure, microvoids