Post-deposition doping of silicon nanowires

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dc.contributor.advisorArendse, Christopher J.
dc.contributor.authorSlinger, Jane Bronwyn
dc.date.accessioned2018-02-07T12:06:09Z
dc.date.accessioned2024-10-30T10:23:41Z
dc.date.available2018-02-07T12:06:09Z
dc.date.available2024-10-30T10:23:41Z
dc.date.issued2018
dc.descriptionMagister Scientiae - MScen_US
dc.description.abstractSilicon nanowires (Si NWs) continue to demonstrate superior properties to their bulk counterparts, with respect to their morphological and electrical transport properties for the use in photovoltaic (PV) applications. The two most common and simplest approaches for Si NW fabrication are the bottom-up approach, namely, vapour-liquidsolid (VLS) growth and the top-down approach, namely, the metal-assisted chemical etching (MaCE) fabrication technique. Thermal diffusion of phosphorus (P) in Si is at present the primary method for emitter formation in Si solar cell processing. Most work done in the literature that is based on the diffusion doping of Si NWs has been carried out by means of VLS-grown Si NWs. Therefore, there is a lack of the understanding of the particular diffusion mechanism of applying the phosphorus dopant source to the MaCE-grown Si NWs.en_US
dc.identifier.urihttps://hdl.handle.net/10566/16668
dc.language.isoenen_US
dc.publisherUniversity of the Western Capeen_US
dc.rights.holderUniversity of the Western Capeen_US
dc.titlePost-deposition doping of silicon nanowiresen_US

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