Post-deposition doping of silicon nanowires
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Date
2018
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Publisher
University of the Western Cape
Abstract
Silicon nanowires (Si NWs) continue to demonstrate superior properties to their bulk
counterparts, with respect to their morphological and electrical transport properties for
the use in photovoltaic (PV) applications. The two most common and simplest
approaches for Si NW fabrication are the bottom-up approach, namely, vapour-liquidsolid
(VLS) growth and the top-down approach, namely, the metal-assisted chemical
etching (MaCE) fabrication technique. Thermal diffusion of phosphorus (P) in Si is at
present the primary method for emitter formation in Si solar cell processing. Most work
done in the literature that is based on the diffusion doping of Si NWs has been carried
out by means of VLS-grown Si NWs. Therefore, there is a lack of the understanding of
the particular diffusion mechanism of applying the phosphorus dopant source to the
MaCE-grown Si NWs.
Description
Magister Scientiae - MSc