Growth and characterization of FeSi nanowires by chemical vapor deposition for gas sensing applications

dc.contributor.advisorMwakikunga, B.W.
dc.contributor.authorThabethe, Sibongiseni Stanley
dc.date.accessioned2015-05-29T14:52:27Z
dc.date.accessioned2024-10-30T10:23:12Z
dc.date.available2015-05-29T14:52:27Z
dc.date.available2024-10-30T10:23:12Z
dc.date.issued2014
dc.description>Magister Scientiae - MScen_US
dc.description.abstractFeSi nanowires were synthesized via a chemical vapor deposition method. Anhydrous FeCl3 powder in this case served as the Fe source and was evaporated at a temperature of 1100oC to interact with silicon substrates which served as the silicon source. The nanowires followed the vapor solid (VS) growth mechanism, which does not require the use of a metal catalyst; the native silicon oxide layer on the silicon substrates played the role of the catalyst in the growth of these nanostructures. A second growth mechanism, involving the use of a metal catalyst to assist in the growth of the nanowires was attempted by depositing a thin film of gold on silicon substrates. The reaction yielded SiOx nanowires; these results are discussed in detail in Chapter 5. All the nanostructures were characterized by X-ray diffraction (XRD), Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM), Photoluminescence Spectroscopy (PL), Raman Spectroscopy and Fourier Transform Infrared Spectroscopy (FTIR).en_US
dc.identifier.urihttps://hdl.handle.net/10566/16597
dc.language.isoenen_US
dc.publisherUniversity of the Western Capeen_US
dc.rights.holderUniversity of the Western Capeen_US
dc.subjectFeSi nanowiresen_US
dc.subjectChemical vapor depositionen_US
dc.subjectBand structuresen_US
dc.subjectX-ray diffractionen_US
dc.titleGrowth and characterization of FeSi nanowires by chemical vapor deposition for gas sensing applicationsen_US
dc.typeThesisen_US

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