Dynamic variation of hydrogen dilution during hot-wire chemical vapour deposition of silicon thin films

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dc.contributor.advisorArendse, Christopher J.
dc.contributor.advisorMuller, T.F.G.
dc.contributor.advisorMalgas, G.
dc.contributor.authorTowfie, Nazley
dc.date.accessioned2014-11-13T09:58:29Z
dc.date.accessioned2024-10-30T10:23:07Z
dc.date.available2014-11-13T09:58:29Z
dc.date.available2024-10-30T10:23:07Z
dc.date.issued2013
dc.description>Magister Scientiae - MScen_US
dc.description.abstractThis study reports on the effects of hydrogen dilution and deposition time on six silicon thin films deposited at six specific deposition regimes. The thin film properties are investigated via X-Ray diffraction analysis, raman spectroscopy, fourier transform infra-red spectroscopy, elastic recoil detection analysis, scanning and transmission electron microscopy and UV-visible spectroscopy. This investigation revealed the dominating etching effect of atomic hydrogen with the increase in hydrogen dilution and a bonded hydrogen content (CH) exceeding 10 at.% for each of the six thin films. The optically determined void volume fraction and static refractive index remain constant, for each thin film, with the change in CHen_US
dc.identifier.urihttps://hdl.handle.net/10566/16576
dc.language.isoenen_US
dc.publisherUniversity of the Western Capeen_US
dc.rights.holderUniversity of the Western Capeen_US
dc.subjectHydrogenated amorphous siliconen_US
dc.subjectHydrogenated nanocrystalline siliconen_US
dc.subjectHot wire chemical vapour depositionen_US
dc.subjectTandem solar cellsen_US
dc.subjectNano-voidsen_US
dc.subjectMorphologyen_US
dc.subjectMicrostructureen_US
dc.subjectHydrogen etchingen_US
dc.titleDynamic variation of hydrogen dilution during hot-wire chemical vapour deposition of silicon thin filmsen_US
dc.typeThesisen_US

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