Low temperature growth of Amorphous Silicon thin film

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dc.contributor.advisorKnoesen, D.
dc.contributor.advisorHalindintwali, S.
dc.contributor.authorMalape, Maibi Aaron
dc.contributor.otherDept. of Physics
dc.contributor.otherFaculty of Science
dc.date.accessioned2013-10-11T09:31:32Z
dc.date.accessioned2024-10-30T10:23:05Z
dc.date.available2009/10/05 09:19
dc.date.available2009/10/05
dc.date.available2013-10-11T09:31:32Z
dc.date.available2024-10-30T10:23:05Z
dc.date.issued2007
dc.descriptionMagister Scientiae - MScen_US
dc.description.abstractThe growth of amorphous hydrogenated silicon (a-Si:H) thin films deposided by hot wire chemical vapor deposition (HWCVD) has been studied. The films have been characterised for optical and structural properties by means of UV/VIS,FITR,ERDA, XRD.XTEM and Raman spectroscopy. Low subtrate heater temperatures in the range form 130 to 200 degrees celcius were used in this thesis because it is believed to allow for the deposition of device quality a-Si:H which can be used for electronic photovoltaic devices. Furthermore, low temperatures allows the deposition of a-Si:H on any subtrate and thus offers the possibility of making large area devices on flexible organic substances. We showed that the optical and structural properties of grown a-Si:H films depended critically upon whether the films were produced with silane gas or silane diluted with hydrogen gas. We also showed that it is possible to to deposit crystalline materials at low temperature under high hydrogen dilution ratio of silane gas.en_US
dc.description.countrySouth Africa
dc.identifier.urihttps://hdl.handle.net/10566/16561
dc.language.isoenen_US
dc.publisherUniversity of the Western Capeen_US
dc.rights.holderUniversity of the Western Capeen_US
dc.subjectSiliconen_US
dc.subjectSemiconductorsen_US
dc.subjectThin Filmsen_US
dc.titleLow temperature growth of Amorphous Silicon thin filmen_US
dc.typeThesisen_US

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