Computational modelling of a hot-wire chemical vapour deposition reactor chamber

dc.contributor.advisorSquare, L. C.
dc.contributor.advisorArendse, C. J.
dc.contributor.authorFourie, Lionel Fabian
dc.date.accessioned2020-11-23T13:09:56Z
dc.date.accessioned2024-10-30T10:24:02Z
dc.date.available2020-11-23T13:09:56Z
dc.date.available2024-10-30T10:24:02Z
dc.date.issued2020
dc.description>Magister Scientiae - MScen_US
dc.description.abstractIn this thesis, I explore the subjects of fluid dynamics and the Hot-Wire Chemical Vapour Deposition (HWCVD) process. HWCVD, in its simplicity, is one of the more powerful and elegant deposition techniques available in thin film research which allows for both the growth and post deposition treatments of functional thin films. In the HWCVD process, the quality of the final films is determined by a fixed set of deposition parameters namely: temperature, pressure and the gas flow rate. Finding the optimal combination of these parameters is key to obtaining the desired film specifications during every deposition. Conducting multiple trial experiments to determine said parameters can be expensive and time consuming, this is where simulation methods come into play. One such simulation method is Computational Fluid Dynamics (CFD) modellingen_US
dc.identifier.urihttps://hdl.handle.net/10566/16708
dc.language.isoenen_US
dc.publisherUniversity of Western Capeen_US
dc.rights.holderUniversity of Western Capeen_US
dc.subjectHWCVDen_US
dc.subjectRadiationen_US
dc.subjectHeat transferen_US
dc.subjectOpenfOAMen_US
dc.subjectBuoyant simple foamen_US
dc.titleComputational modelling of a hot-wire chemical vapour deposition reactor chamberen_US

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