p- and e- type Semiconductor layers optimization for efficient perovskite photovoltaics

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dc.contributor.advisorRoss, Natasha
dc.contributor.authorTambwe, Kevin
dc.date.accessioned2020-03-11T09:08:11Z
dc.date.accessioned2024-05-09T10:51:55Z
dc.date.available2024-05-09T10:51:55Z
dc.date.issued2019
dc.description>Magister Scientiae - MScen_US
dc.description.abstractPerovskite solar cells have attracted a tremendous amount of research interest in the scientific community recently, owing to their remarkable performance reaching up to 22% power conversion efficiency (PCE) in merely 6 to 7 years of development. Numerous advantages such as reduced price of raw materials, ease of fabrication and so on, have contributed to their increased popularity. However, there are several factors that limits their performance, among which is recombination process of charge carriers occurring at the TiO2/Perovskite interface. Therefore, it is crucial to prevent charge carriers recombination at the photo anode/electrode interface, in order to improve the overall efficiency of the Perovskite solar cell (PSC) devices.en_US
dc.description.embargo2023-12-01
dc.identifier.urihttps://hdl.handle.net/10566/14638
dc.language.isoenen_US
dc.publisherUniversity of the Western Capeen_US
dc.rights.holderUniversity of the Western Capeen_US
dc.subjectSemiconductorsen_US
dc.subjectPerovskite solar cellsen_US
dc.subjectPower conversion efficiency (PCE)en_US
dc.titlep- and e- type Semiconductor layers optimization for efficient perovskite photovoltaicsen_US

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