Facile synthesis of NiSe2:α-Fe2O3 thin film: physical, optical and photoelectronic properties

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dc.contributor.authorVisser, E
dc.contributor.authorCummings, F
dc.contributor.authorCory, N
dc.date.accessioned2023-06-26T13:52:07Z
dc.date.available2023-06-26T13:52:07Z
dc.date.issued2023
dc.description.abstractIn this study, a highly scalable approach to fabricating NiSe2:α-Fe2O3 heterojunction thin film in the absence of a dehydration step or lattice parameter matching was established. The attachment of NiSe2 to α-Fe2O3 leads to an 82% and 97% decrease in charge transfer resistance (with and without illumination respectively) compared to pristine α-Fe2O3. The magnitude of the open circuit potential increased from approximately -0.30 V to -0.42 V vs Ag/AgCl, providing a stronger electric field for charge carrier separation. Charge transfer efficiency was calculated by using a ratio of charge carriers removed and those produced in the bulk. Scanning electron microscopy coupled with the electrodeposition current-time transients study proved that the attachment process involved the progressive nucleation of NiSe2 and the simultaneous cathodic reduction of α-Fe2O3.en_US
dc.identifier.citationVisser, E., Cory, N., Mkhari, O., Chamier, J., Cummings, F. and Chowdhury, M., 2023. Facile synthesis of NiSe2: α-Fe2O3 thin film: Physical, optical and photoelectronic properties. Thin Solid Films, 774, p.139837.en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2023.139837
dc.identifier.urihttp://hdl.handle.net/10566/9156
dc.language.isoenen_US
dc.publisherThin Solid Filmsen_US
dc.subjectPhotoelectronicen_US
dc.subjectElectrodepositionen_US
dc.subjectThin filmen_US
dc.subjectFerric oxideen_US
dc.subjectFacile synthesisen_US
dc.titleFacile synthesis of NiSe2:α-Fe2O3 thin film: physical, optical and photoelectronic propertiesen_US
dc.typeArticleen_US

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