Tin-oxide thin films by thermal oxidation

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dc.contributor.advisorArendse, CJ
dc.contributor.authorJames, Amy Frances
dc.date.accessioned2021-04-28T07:32:57Z
dc.date.accessioned2024-10-30T10:24:04Z
dc.date.available2021-04-28T07:32:57Z
dc.date.available2024-10-30T10:24:04Z
dc.date.issued2021
dc.description>Magister Scientiae - MScen_US
dc.description.abstractTin dioxide (SnO2) thin films are a worthy candidate for an electron transport layer (ETL) in perovskite solar cells, due to its suitable energy level, high electron mobility of 240 cm2 v-1 s- 1, desirable band gap of 3.6 - 4.0 eV, and ultimately proves to be suited for a low temperature thermal oxidation technique for ETL production. A variety of methods are available to prepare SnO2 thin films such as spin and dip coating and chemical bath deposition. However, the customary solid-state method, which incorporates thermal decomposition and oxidation of a metallic Sn precursor compound in an oxygen abundant atmosphere prevails to be low in cost, is repeatable and allows for large-scale processing.en_US
dc.identifier.urihttps://hdl.handle.net/10566/16712
dc.language.isoenen_US
dc.publisherUniversity of Western Capeen_US
dc.rights.holderUniversity of Western Capeen_US
dc.subjectPhotovoltaicsen_US
dc.subjectPerovskiteen_US
dc.subjectTin oxideen_US
dc.subjectSemiconductoren_US
dc.subjectCoble creepen_US
dc.subjectCrystal latticeen_US
dc.titleTin-oxide thin films by thermal oxidationen_US

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