Browsing by Author "Malgas, Gerald"

Now showing 1 - 5 of 5
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    Annealing effect of hybrid solar cells based on poly (3-hexylthiophene) and zinc-oxide nanostructures
    (Elsevier, 2013) Motaung, David; Malgas, Gerald; Ray, Suprakas S.; Arendse, Christopher
    The structural growth and optical and photovoltaic properties of the organic–inorganic hybrid structures of zinc oxide (ZnO)-nanorods/poly-3-hexylthiophene (P3HT) and two variations of organic polymer blends of ZnO/ P3HT:C60 fullerene and ZnO/P3HT:6,6]-phenyl C61 butyric acid methyl ester were studied in detail during thermal annealing. The ordering of the P3HT nanocrystals increased during annealing, which also improved hole transport in the hybrid structures. The optical constants of the ZnO/P3HT:[6,6]-phenyl C61 butyric acid methyl ester (PCBM) films elevated with annealing temperature due to the improved crystallisation induced by the formation of P3HT crystalline domains. As a result, a maximum power conversion efficiency of approximately 1.03% was achieved for the annealed ZnO/P3HT:PCBM device at 140 °C. These findings indicate that ZnO-nanorods/P3HT:PCBM films are stable at temperatures up to 160 °C.
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    Comparative study: the effect of annealing conditions on the properties of P3HT:PCBM blends
    (Springer Verlag, 2013) Motaung, David E.; Malgas, Gerald; Nkosi, Steven S.; Mhlongo, Gugu H.; Mwakikunga, Bonex W.; Malwela, Thomas; Arendse, Christopher; Muller, Theophillus F. G.; Cummings, Franscious R.
    This paper presents a detailed study on the role of various annealing treatments on organic poly(3-hexylthiophene) and [6]-phenyl-C61-butyric acid methyl ester blends under different experimental conditions. A combination of analytical tools is used to study the alteration of the phase separation, structure and photovoltaic properties of the P3HT:PCBM blend during the annealing process. Results showed that the thermal annealing yields PCBM ‘‘needle-like’’ crystals and that prolonged heat treatment leads to extensive phase separation, as demonstrated by the growth in the size and quantity of PCBM crystals. The substrate annealing method demonstrated an optimal morphology by eradicating and suppressing the formation of fullerene clusters across the film, resulting in longer P3HT fibrils with smaller diameter. Improved optical constants, PL quenching and a decrease in the P3HT optical bad-gap were demonstrated for the substrate annealed films due to the limited diffusion of the PCBM molecules. An effective strategy for determining an optimized morphology through substrate annealing treatment is therefore revealed for improved device efficiency.
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    Hot-wire chemical vapor deposition of silicon nitride thin films
    (2013) Adams, Abdulghaaliq; Arendse, Christopher; Muller, Theo; Malgas, Gerald
    Amorphous silicon nitride (a-SiN:H) thin films has a multitude of applications, stemming from the tunability of the material properties. Plasma enhanced chemical vapour deposition (PECVD) is the industrial workhorse for production of device quality a-SiN:H. However, this technique has drawbacks in terms of film quality, rooting from ion bombardment, which then results in undesirable oxidation. Hot wire chemical vapour deposition (HWCVD) has shown to be a viable competitor to its more costly counterpart, PECVD. A thin film produced by HWCVD lacks ion bombardment due to the deposition taking place in the absence of plasma. This study will focus on optimising the MVsystems ® HWCVD chamber at The University of the Western Cape, for production of device quality a-SiN:H thin films at low processing parameters. The effect of these parameters on the structural, optical and morphological properties was investigated, for reduction of production costs. The films were probed by heavy ion elastic recoil detection, energy dispersive spectroscopy, Fourier transform infrared spectroscopy, atomic force microscopy, Xray diffraction, and ultraviolet visible spectroscopy. It was shown that silicon rich, device quality a-SiN:H thin films could be produced by HWCVD at wire temperatures as low as 1400 °C and the films showed considerable resistance to oxidation in the bulk.
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    Optical properties of annealed hydrogenated amorphous silicon nitride (a-SiNx:H) thin films for photovoltaic application
    (2013) Jacobs, Sulaiman; Muller, Theo; Arendse, Christopher; Malgas, Gerald
    Technological advancement has created a market for large area electronics such as solar cells and thin film transistors (TFT’s). Such devices now play an important role in modern society. Various types of conducting, semiconducting and insulating thin films of the order of hundreds, or even tens of nanometres are combined in strata to form stacks to create interactions and phenomena that can be exploited and employed in these devices for the benefit of mankind. One such is for the generation of energy via photovoltaic devices that use thin film technology; these are known as second and third generation solar cells. Silicon and its alloys such as silicon germanium (SiGex), silicon oxide (SiOx), silicon carbide (SiCx) and silicon nitride (SiNx) play an important role in these devices due to the fact that each material in its different structures, whether amorphous, micro or nano-crystalline or completely crystalline, has its own range of unique optical, mechanical and electrical properties. These structures and their material properties can thus exert a huge influence over the overall device performance. viii Chemical vapour deposition (CVD) techniques are most widely used in industry to obtain thin films of silicon and silicon alloys. Source gases are decomposed by the external provision of energy thereby allowing for the growth of a thin solid film on a substrate. In this study a variant of CVD, namely Hot Wire Chemical Vapour Deposition (HWCVD) will be used to deposit thin films of silicon nitride by the decomposition of silane (SiH4), hydrogen (H2) and ammonia (NH3) on a hot tantalum filament (~1600 C). Hydrogenated amorphous silicon nitride (a-SiNx:H) has great potential for application in optoelectronic devices. In commercial solar cell production its potential for use as anti-reflection coatings are due to its intermediate refractive index combined with low light absorption. An additional benefit is the passivation of interface and crystal defects due to the bonded hydrogen. This can lead to better photon conversion efficiency. Its optical properties including optical band gap, Urbach tail, and wavelength-dependent optical constants such as absorption coefficient and refractive index are crucial for the design and application in the relevant optoelectronic device. The final firing step in the production of micro-crystalline silicon solar cells, allows hydrogen to effuse into the solar cell from the a-SiNx:H, and drives bulk passivation of the grain boundaries. We therefore propose the exploration of annealing effects on the thin film structure. The study undertakes a comparison of optical and bonding structure of the as deposited thin film compared to that of the annealed thin film which would have undergone changes due to high temperature annealing under vacuum. However, it is difficult to simultaneously obtain all of these important ix optical parameters for a-SiNx:H thin films. Ultraviolet visible (UV-vis) spectroscopy will be the method of choice to investigate the optical properties. Infrared (IR) spectroscopy is a source of useful information on the microstructure of the material. In particular, the local atomic bonding configurations involving Si, N, and H atoms in a-SiNx:H films can be obtained by Fourier Transform Infrared Spectroscopy (FTIR). Therefore, this study will attempt to establish a relationship between film microstructure of a-SiNx:H thin films and their macroscopic optical properties.
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    Self-catalytic growth of tin oxide nanowires by chemical vapor deposition process
    (Hindawi, 2013) Thabethe, Bongani; Malgas, Gerald; Motaung, David; Malwela, Thomas; Arendse, Christopher
    We report on the synthesis of tin oxide (SnO2) nanowires by a chemical vapor deposition (CVD) process. Commercially bought SnO nanopowders were vaporized at 1050∘C for 30 minutes with argon gas continuously passing through the system. The assynthesized products were characterized using UV-visible absorption spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), and high-resolution transmission electron microscopy (HRTEM). The band gap of the nanowires determined from UV-visible absorption was around 3.7 eV.The SEM micrographs revealed “wool-like” structure which contains nanoribbons and nanowires with liquid droplets at the tips. Nanowires typically have diameter in the range of 50–200nm and length 10–100 𝜇m. These nanowires followed the vapor-liquid-solid (VLS) growth mechanism.