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  1. Home
  2. Browse by Author

Browsing by Author "Knoesen, Dirk"

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    Aluminium induced crystallization of hydrogenated amorphous silicon thin films
    (University of the Western Cape, 2005) Kotsedi, Lebogang; Knoesen, Dirk; Madjoe, Reginalt
    This study was carried out to crystallize hydrogenated amorphous silicon (a-Si:H) thin films using the aluminium induced crystallization (AIC) technique. This was done to investigate whether is there any lateral crystallization of the a-Si:H thin film away from the aluminium covered surface of the film. The hot wire chemical vapour deposition system (HWCVD) was used to deposit hydrogenated amorphous silicon thin films (a-Si:H) on Corning glass 7059 substrates. The substrate temperature was kept at 300oC while the filament temperature was l600oC during the deposition. The aluminium top layer was deposited at room temperature using the electron beam evaporator. The aluminium deposited, only partially covered the sample, this was done to investigate whether lateral crystallization of the uncovered part will take place. Samples were then annealed at 450oC for times ranging from 30 to 150 minutes in incremental steps of 30 minutes. A temperature series of annealings at l00oC, 150oC, 200oC,300"C and 350oC for 60 minutes were also performed. Energy Dispersive Spectroscopy (EDS) was used for elemental identification after annealing. Rutherford Backscattering Spectrometry was used for the depth profiling of the diffused species. X-ray diffraction (XRD) technique was used for crystallization studies on the aluminium covered side, transmission electron microscopy (TEM) was used to study lateral crystallization and diffraction patterns of crystallized part were taken using selected area diffraction (SAD).
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    Characterization of silicon nitride thin films deposited by hot-wire CVD at low gas flow rates
    (Elsevier, 2013) Oliphant, Clive J.; Arendse, Christopher; Muller, Theophillus F.G.; Knoesen, Dirk
    We examined the chemical, structural, mechanical and optical properties of amorphous hydrogenatedsilicon nitride thin films deposited by hot-wire chemical vapour deposition using SiH4, NH3and H2gases at total flow rates below 33 sccm. Time of flight secondary ion mass spectroscopy reveal that thefilm surfaces consist of predominantly Si with hydrogenated SixNyOzspecies. Energy dispersive X-rayspectroscopy and X-ray photoelectron spectroscopy corroborate on the N/Si ratio. Electron energy lossspectroscopy discloses that the thickness of the nitrogen rich oxidized interface between the SiNxfilmsand the c-Si substrate decrease with an enhancing NH3flow rate. By varying the NH3flow rate, denseSiNxfilms can be realized with hydrogen content between 16 and 9 at.%, a refractive index between 3.5and 1.9 and optical band gap ranging from 2 to 4.5 eV. The SiNxfilm stress is compressive for N/Si < 0.4and tensile for higher N/Si > 0.55. Mechanisms relating the HWCVD conditions and the film structure andproperties are proposed.
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    Determination of the gas-flow patterns inside the hot-wire chemical vapor deposition system, using computational fluids dynamics software (fluent)
    (University of the Western Cape, 2009) Wittes, Thobeka; Knoesen, Dirk; Dept. of Physics; Faculty of Science
    Computational Fluid Dynamics is the analysis of a system involving fluid flow, heat transfer and associated phenomena such as chemical reactions by means of a computer-based simulation. The simulations in this study are performed using (CFD) software package FLUENT. The mixture of two gases (Silane gas (SiH4) and Hydrogen gas (H2)) are delivered into the hot-wire chemical vapor deposition system (HWCVD) with the two deposited substrates (glass and Silicon). This process is performed by the solar cells group of the Physics department at the University of the Western Cape. In this thesis, the simulation is done using a CFD software package FLUENT, to model the gas-flow patterns inside the HWCVD system. This will show how the gas-flow patterns are affected by the varying temperature of the heater in each simulation performed in this study under a constant pressure of 60μBar of the system.
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    The effects of reverse bias on the efficiency of dye solar cells
    (University of the Western Cape, 2009) le Roux, Lukas Johannes; Hietkamp, Sibbele; Knoesen, Dirk; Dept. of Physics; Faculty of Science
    Dye-sensitised solar cells (DSC) have attracted much attention during the last few years due to their high efficiencies and their potentially low production costs. The technology is based on a thin layer of nano sized, high band gap (3.2 eV) TiO2 film. A Ru containing dye (from hereon called the Ru dye) is chemisorbed onto the TiO2 film. This combination acts as the working electrode. The counter electrode consists of a platinum layer which is the catalyst for the regeneration of the Iodine/Iodide electrolyte. The work that is presented here is focused on the results that were obtained during studies of the performance of the DSC under certain reverse bias conditions. When one cell in the series connection in a module is shaded, the current will pass this cell in reverse bias. In such a case the shaded cell will be subjected to a voltage in the reverse direction coming from the other lit cells in the module. This reverse voltage could permanently modify or damage the cell if it is not properly protected. Although the work is focussed on the chemical stability of the dye, various techniques were employed to determine the physical changes in the cell. It was found that a cell that was subjected to a reverse bias of 2 V for 500 min showed a 58% recovery and a cell that was subjected to 4.5 V reverse bias was irreversibly damaged. The UV-vis spectra showed a blue shift (higher energy), the Raman showed no peak at 1713 cm-1 (which indicates the absence of free carboxylate groups) and the FT-IR showed the disappearance of the NC-S absorption band at 2100 cm-1. The combined conclusion is that the - NCS ligand has been depleted and replaced with I3- ions. When measuring the impedance, the Nyquist plots showed an increase in the charge transfer resistance at the counter electrode when subjected to a reverse bias potential of 2 V. This is confirmed by the Bode plots. This indicates a partial oxidation of the Pt catalyst on the counter electrode. It can therefore be stated with confidence that the changes in the cell after being subjected to a reverse bias potential of 2 V for 500 min are changes on the -NCS bonds on the Ru dye as well as the Pt in the counter electrode.
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    Fabrication and characterization of a solar cell using an aluminium p-doped layer in the hot-wire chemical vapour deposition process
    (2010) Lebogang, Kotsedi; Knoesen, Dirk; Madjoe, Reginaldt
    When the amorphous silicon (a-Si) dangling bonds are bonded to hydrogen the concentration of the dangling bond is decreased. The resulting film is called hydrogenated amorphous silicon (a-Si:H). The reduction in the dangling bonds concentration improves the optoelectrical properties of the film. The improved properties of a-Si:H makes it possible to manufacture electronic devices including a solar cell.A solar cell device based on the hydrogenated amorphous silicon (a-Si:H) was fabricated using the Hot-Wire Chemical Vapour Deposition (HWCVD). When an n-i-p solar cell configuration is grown, the norm is that the p-doped layer is deposited from a mixture of silane (SiH4) gas with diborane (B2H6). The boron atoms from diborane bonds to the silicon atoms and because of the number of the valance electrons, the grown film becomes a p-type film. Aluminium is a group 3B element and has the same valence electrons as boron, hence it will also produce a p-type film when it bonds with silicon.In this study the p-doped layer is grown from the co-deposition of a-Si:H from SiH4 with aluminium evaporation resulting in a crystallized, p-doped thin film. When this thin film is used in the n-i-p cell configuration, the device shows photo-voltaic activity.The intrinsic layer and the n-type layers for the solar cell were grown from SiH4 gas and Phosphine (PH3) gas diluted in SiH4 respectively. The individual layers of the solar cell device were characterized for both their optical and electrical properties. This was done using a variety of experimental techniques. The analyzed results from the characterization techniques showed the films to be of device quality standard. The analysed results of the ptype layer grown from aluminium showed the film to be successfully crystallized and doped.A fully functional solar cell was fabricated from these layers and the cell showed photovoltaic activity.
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    Fabrication and characterization of a solar cell using an aluminium p-doped layer in the hot-wire chemical vapour deposition process
    (University of the Western Cape, 2010) Kotsedi, Lebogang; Knoesen, Dirk; Madjoe, Reginaldt; Dept. of Physics
    When the amorphous silicon (a-Si) dangling bonds are bonded to hydrogen the concentration of the dangling bond is decreased. The resulting film is called hydrogenated amorphous silicon (a-Si:H). The reduction in the dangling bonds concentration improves the optoelectrical properties of the film. The improved properties of a-Si:H makes it possible to manufacture electronic devices including a solar cell. A solar cell device based on the hydrogenated amorphous silicon (a-Si:H) was fabricated using the Hot-Wire Chemical Vapour Deposition (HWCVD). When an n-i-p solar cell configuration is grown, the norm is that the p-doped layer is deposited from a mixture of silane (SiH4) gas with diborane (B2H6). The boron atoms from diborane bonds to the silicon atoms and because of the number of the valance electrons, the grown film becomes a p-type film. Aluminium is a group 3B element and has the same valence electrons as boron, hence it will also produce a p-type film when it bonds with silicon. In this study the p-doped layer is grown from the co-deposition of a-Si:H from SiH4 with aluminium evaporation resulting in a crystallized, p-doped thin film. When this thin film is used in the n-i-p cell configuration, the device shows photo-voltaic activity. The intrinsic layer and the n-type layers for the solar cell were grown from SiH4 gas and Phosphine (PH3) gas diluted in SiH4 respectively. The individual layers of the solar cell device were characterized for both their optical and electrical properties. This was done using a variety of experimental techniques. The analyzed results from the characterization techniques showed the films to be of device quality standard. The analysed results of the ptype layer grown from aluminium showed the film to be successfully crystallized and doped. A fully functional solar cell was fabricated from these layers and the cell showed photovoltaic activity.
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    Filament carburization during the hot-wire chemical vapour deposition of carbon nanotubes
    (University of the Western Cape, 2008) Oliphant, Clive Justin; Arendse, C.J.; Knoesen, Dirk; Dept. of Physics; Faculty of Science
    This study reports on the changes in the structural properties of a tungsten-filament when exposed to a methane / hydrogen ambient for different durations at various filament-temperatures.
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    Manufacturing of synthetic soda ash
    (University of the Western Cape, 2009) Madima, Takalani; Knoesen, Dirk; Jongens, Sharon; NULL; Faculty of Science
    The aim of the project was to study the manufacturing of synthetic soda ash (sodium carbonate, Na2CO3) on an industrial scale. Currently all Soda ash that is used in South Africa for manufacturing glass is imported at a high cost, and the company Nampak Wiegand Glass (South Africa) is investigating the possibility to locally manufacture synthetic soda ash. About 75% of soda ash is synthetically produced from either the Leblanc process, Solvay process, Modified Solvay (Dual) process or dry lime process. This study concentrated on the Solvay process on a laboratory scale for eventual input into a larger pilot plant. The produced material was analyzed using analytical techniques such as FTIR (Fourier Transform Infrared spectroscopy), Scanning Electron Microscopy and Energy Dispersive X-ray Spectroscopy, Inductively Coupled Plasma Mass Spectrometry (ICP-MS) and Inductively Coupled Plasma Atomic Emission spectroscopy (ICP-AES). There are certain standard requirements for impurities in the soda ash, and this needed to be measured and determined what changes to the process will bring the impurities to the required minimum standard. Environmental issues around the manufacturing process were also studied. After completing of the laboratory experiments and the extraction of required data from the results, Nampak will use the information to decide on a followup to the building of a small pilot plant to further test and develop the engineering and economical aspects of a full plant. If successful a full scale manufacturing plant can be developed in South Africa for producing soda ash. This study thus will not only help Nampak Wiegand Glass in finalizing the decision to go ahead, but its result will also benefit other companies that use the soda ash in oil refining, water treatment, pulp and paper, chemical industry etc. Some parts of the work done will be proprietary to Nampak and subject to confidentiality agreement.
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    Optical emission spectroscopy of laser induced plasmas containing carbon and transitional metals
    (University of the Western Cape, 2008) Motaung, David Edmond; Moodley, Mathew; Knoesen, Dirk; Dept. of Physics; Faculty of Science
    The spectroscopic, SEM and Raman measurements on carbon nanotubes under the exact conditions of which OES analysis were made showed that at a pressure of 400 Torr and a flow rate of 200 sccm, the quality and quantity of single-walled carbon nanotubes was the highest.
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    Optical modeling of amorphous and metal induced crystallized silicon with an effective medium approximation
    (University of the Western Cape, 2009) Muller, Theophillus Frederic George; Knoesen, Dirk; Arendse, Christopher; Dept. of Physics; Faculty of Science
    In this thesis we report on the metal-mediated-thermally induced changes of the structural and optical properties of hydrogenated amorphous silicon deposited by hot-wire CVD, where aluminium and nickel were used to induce crystallization. The metal-coated amorphous silicon was subjected to a thermal annealing regime of between 150 and 520°C. The structural measurements, obtained by Raman spectroscopy, show partial crystallization occurring at 350 °C. At the higher annealing temperatures of 450°C and 520°C complete crystallization occurs. Reflection and transmission measurements in the UV-visible range were then used to extract the optical properties. By adopting the effective medium approximation a single optical model could be constructed that could successfully model material that was in different structural phases, irrespective of metal contamination. Changes in the absorption of the material in various stages of transition were confirmed with a directly measured absorption technique, and the modelled absorption closely followed the same trends This study forms part of the larger overall solar cell research project, of which the primary aim is to eventually develop a silicon solar panel that optimises the characteristics for best performance.
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    A study of hydrogenated nanocrystalline silicon thin films deposited by hot-wire chemical vapour deposition (HWCVD)
    (University of the Western Cape, 2005) Halindintwali, Sylvain; Knoesen, Dirk; Dept. of Physics; Faculty of Science
    In this thesis, intrinsic hydrogenated nanocrystalline silicon thin films for solar cells application have been deposited by means of the hot – wire chemical vapour deposition (HWCVD) technique and have been characterised for their performance. It is noticed that hydrogenated nanocrystalline silicon is similar in some aspects (mainly optical) to its counterpart amorphous silicon actually used as the intrinsic layer in the photovoltaic industry. Substantial differences between the two materials have been found however in their respective structural and electronic properties. We show that hydrogenated nanocrystalline silicon retains good absorption coefficients known for amorphous silicon in the visible region. The order improvement and a reduced content of the bonded hydrogen in the films are linked to their good stability. We argue that provided a moderate hydrogen dilution ratio in the monosilane gas and efficient process pressure in the deposition chamber, intrinsic hydrogenated nanocrystalline silicon with photosensitivity better than 102 and most importantly resistant to the Staebler Wronski effect (SWE) can be produced. This work explores the optical, structural and electronic properties of this promising material whose study – samples have been exclusively produced in the HWCVD reactors based in the Solar Cells laboratory of the Physics department at the University of the Western Cape.
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    Three dimensional thermal modelling of high temperature proton exchange membrane fuel cells in a serpentine design
    (University of the Western Cape, 2010) Maasdorp, Lynndle Caroline; Knoesen, Dirk; Ulleberg, Øystein; Dept. of Physics; Faculty of Science
    The aim of my work is to model a segment of a unit cell of a fuel cell stack using numerical methods which is classified as computational fluid dynamics and implementing the work in a commercial computational fluid dynamics package, FLUENT. The focus of my work is to study the thermal distribution within this segment. The results of the work aid in a better understanding of the fuel cell operation in this temperature range. At the time of my investigation experimental results were unavailable for validation and therefore my results are compared to previously published results published. The outcome of the results corresponds to this, where the current flux density increases with the increasing of operating temperature and fixed operating voltage and the temperature variation across the fuel cell at varying operating voltages. It is in the anticipation of determining actual and or unique material input parameters that this work is done and at which point this studies results would contribute to the understanding high temperature PEM fuel cell thermal behaviour, significantly.
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    Towards stimuli-responsive functional nanocomposites: smart tunable plasmonic nanostructures Au-VO2
    (University of the Western Cape, 2010) Kana, Jean Bosco Kana; Maaza, Malik; Knoesen, Dirk; Dept. of Physics; Faculty of Science
    The fascinating optical properties of metallic nanostructures, dominated by collective oscillations of free electrons known as plasmons, open new opportunities for the development of devices fabrication based on noble metal nanoparticle composite materials. This thesis demonstrates a low-cost and versatile technique to produce stimuli-responsive ultrafast plasmonic nanostructures with reversible tunable optical properties. Albeit challenging, further control using thermal external stimuli to tune the local environment of gold nanoparticles embedded in VO2 host matrix would be ideal for the design of responsive functional nanocomposites. We prepared Au-VO2 nanocomposite thin films by the inverted cylindrical reactive magnetron sputtering (ICMS) known as hollow cathode magnetron sputtering for the first time and report the reversible tuning of surface plasmon resonance of Au nanoparticles by only adjusting the external temperature stimuli. The structural, morphological, interfacial analysis and optical properties of the optimized nanostructures have been studied. ICMS has been attracting much attention for its enclosed geometry and its ability to deposit on large area, uniform coating of smart nanocomposites at high deposition rate. Before achieving the aforementioned goals, a systematic study and optimization process of VO2 host matrix has been done by studying the influence of deposition parameters on the structural, morphological and optical switching properties of VO2 thin films. A reversible thermal tunability of the optical/dielectric constants of VO2 thin films by spectroscopic ellipsometry has been intensively also studied in order to bring more insights about the shift of the plasmon of gold nanoparticles imbedded in VO2 host matrix.
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    The use of FLUENT for heat flow studies of the hot-wire chemical vapor deposition system to determine the temperatures reached at the growing layer surface
    (University of the Western Cape, 2009) Zhou, En; Knoesen, Dirk; Dept. of Physics; Faculty of Science
    The overall aim of this project is to study the heat transfer inside the reaction chamber of the Hot-Wire Chemical Vapor Deposition (HWCVD) system with a commercial software package FLUENT6.3; it is one of the most popular Computational Fluid Dynamics solvers for complex flows ranging from incompressible to mildly compressible to even highly compressible flows. The wealth of physical models in FLUENT allows us to accurately predict laminar and turbulent flows, various modes of heat transfer, chemical reactions, multiphase flows and other phenomena with complete mesh flexibility and solution-based mesh adaptation. In this study the 3-D HWCVD geometry was measured and created in GAMBIT which then generates a mesh model of the reaction chamber for the calculation in FLUENT. The gas flow in this study was characterized as the steady and incompressible fluid flow due to the small Mach number and assumptions made to simplify the complexity of the physical geometry. This thesis illustrates the setups and solutions of the 3-D geometry and the chemically reacting laminar and turbulent gas flow, wall surface reaction and heat transfer in the HWCVD deposition chamber.

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