Solid state dewetting of a metal –semiconductor bi-layers deposited onto c-Si substrate

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dc.contributor.authorHalindintwali, Sylvain
dc.contributor.authorMasenya, Madipoane
dc.contributor.authorMadhuku, Morgan
dc.date.accessioned2023-04-21T09:21:46Z
dc.date.available2023-04-21T09:21:46Z
dc.date.issued2023
dc.description.abstractA bi-layers stack consisting of a semiconductor thin film of a varied thickness and a very thin Pd layer (SiC/Pd/c-Si).was deposited onto c-Si by e-beam evaporation at room temperature. The multi-layers structure was subjected to a thermal annealing process at near eutectic temperature of the Si – Pd phase. It is noticed, through top view SEM and cross-section STEM analyses, that the sandwiched Pd metal layer dewets from the interface with the c-Si substrate in well dispersed nanoparticles and it diffuses inward onto the top few monolayers of the substrate; at times it permeates shallowly through the SiC semiconductor top layer. The size distribution of the nanoparticles was found to be closely linked to the thickness of the top semiconductor layer.en_US
dc.identifier.citationHalindintwali, S. et al. (2023). Solid state dewetting of a metal –semiconductor bi-layers deposited onto c-Si substrate. Astrophysical Journal, Supplement Series, 265(2), 43. 10.1007/s10854-023-10135-0en_US
dc.identifier.issn09574522
dc.identifier.uri10.1007/s10854-023-10135-0
dc.identifier.urihttp://hdl.handle.net/10566/8853
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.subjectPhysicsen_US
dc.subjectMetal nanoparticlesen_US
dc.subjectPalladiumen_US
dc.subjectSubstratesen_US
dc.subjectThin filmsen_US
dc.titleSolid state dewetting of a metal –semiconductor bi-layers deposited onto c-Si substrateen_US
dc.typeArticleen_US

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