One-pot synthesis and characterization of InP/ZnSe semiconductor nanocrystals

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dc.contributor.authorMushonga, Paul
dc.contributor.authorOnani, Martin O.
dc.contributor.authorMadiehe, Abram M.
dc.contributor.authorMeyer, Mervin
dc.date.accessioned2018-01-15T08:06:55Z
dc.date.available2018-01-15T08:06:55Z
dc.date.issued2013
dc.description.abstractWe report on the one-pot synthesis of InP/ZnSe quantum dots (QDs) using a precursor-based colloidal synthesis in a noncoordinating solvent environment. The structural and optical studies were carried out on the as-prepared InPQDs. The quantum yield of the nanocrystals was recorded as 6% and a 1.4 times reduction in the ratio of trap-related emission to band edge emission was observed on ZnSe passivation of the InPQDs.en_US
dc.description.accreditationWeb of Science
dc.identifier.citationMushonga, P. et al. (2013). One-pot synthesis and characterization of InP/ZnSe semiconductor nanocrystals. Materials Letters, 95: 37-39en_US
dc.identifier.issn0167-577X
dc.identifier.urihttp://dx.doi.org/10.1016/j.matlet.2012.12.102
dc.identifier.urihttp://hdl.handle.net/10566/3387
dc.language.isoenen_US
dc.privacy.showsubmitterFALSE
dc.publisherElsevieren_US
dc.rightsThis is the author-version of the article published online at: http://dx.doi.org/10.1016/j.matlet.2012.12.102
dc.status.ispeerreviewedTRUE
dc.subjectInPen_US
dc.subjectZnSeen_US
dc.subjectQuantum dotsen_US
dc.subjectSemiconductor nanocrystalsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectPassivationen_US
dc.titleOne-pot synthesis and characterization of InP/ZnSe semiconductor nanocrystalsen_US
dc.typeArticleen_US

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